Micron Technology has revealed plans to build a second Leading-Edge Memory Manufacturing Fab in Boise, Idaho, expanding its manufacturing footprint as part of an expansive $200 billion U.S. investment program aimed at boosting domestic semiconductor production and R&D.
Micron has announced a new $30 billion investment aimed at strengthening its domestic operations. This funding will support the construction of a second leading-edge memory fabrication plant (fab) in Boise, Idaho; the expansion and modernization of its existing facility in Manassas, Virginia; and the establishment of advanced packaging capabilities for High Bandwidth Memory (HBM), a key technology for meeting the rising demand driven by artificial intelligence.
This $30 billion is in addition to the company’s prior investment plans and plays a central role in Micron’s overall strategy to enhance America’s technological leadership and build a more resilient, U.S.-based semiconductor supply chain. The $30B is a subset of the broader $200B investment.
Micron plans to build two leading-edge high-volume fabs in Idaho is expected to generate over 17,000 new jobs.
This new plant will be co-located with Micron’s existing R&D facility and first fab in Boise, According to Micron, By placing both fabs alongside its existing R&D operations in the state, they aim to accelerate product development and reduce time to market—especially for cutting-edge technologies like High Bandwidth Memory (HBM), which plays a critical role in powering AI applications.
What’s Known So Far
Although Micron confirmed that the second fab is going to Idaho, the company has not disclosed the real cost or construction timeline for this venture. The new factory, however, will come online earlier than the first New York fab, whose groundwork is expected to begin later this year.
The second Boise fab is a follow-on to ongoing work on Micron’s first Idaho fab, where production of DRAM will commence in 2027.
Part of a Larger U.S. Growth Strategy
The second Boise fab is just a part of Micron’s larger U.S. strategy, which includes:
Two flagship Idaho fabs
Up to four New York fabs (environmental studies already in progress)
Growing and updating the Virginia fab. Micron will transfer its state-of-the-art High Bandwidth Memory (HBM) packaging technology to the United States once the completion of its second Idaho fab. Micron has already received $275 million in direct CHIPS Act funds to support the upcoming expansion and modernization of its plant in Manassas, Virginia, with ground breaking set to begin this year.
New American-next-generation based packaging of High Bandwidth Memory (HBM)
$50 billion devoted to R&D in all locations
Micron expects its entire portfolio of U.S. investments to be eligible for the Advanced Manufacturing Investment Credit (AMIC) and has already secured funds with local, state, and federal authorities. It has up to $6.4 billion in direct funding under the CHIPS Act for the support of building two state–of-the-art fabs in Idaho, up to two in New York, and to upgrade and expand the company‘s existing facility in Virginia.
Together, the investments will place U.S. at the forefront of memory technology. With AI revolutionizing industries ranging from automotive and aerospace to healthcare and national defense.
Read also: Ground breaking at Micron chip manufacturing facility, Idaho
Job Creation and Economic Impact
Micron estimates the entire $200 billion of investment will create about 90,000 direct and indirect jobs within the U.S. semiconductor supply chain. The jobs are in construction, engineering, manufacturing, and long-term operation. According to Micron, Idaho fabs alone are expected to generate over 17,000 new jobs.
To support this kind of growth, Micron has invested over $325 million in workforce development initiatives. They include:
Creation of semiconductor curriculum
Apprenticeships through community colleges
University research partnerships
Expanded access to technical careers in Idaho, New York, and Virginia
Strategic Importance for HBM and AI
Micron’s investment is driven mainly by skyrocketing demand for High Bandwidth Memory (HBM) — a requirement for AI and high-performance computing. Although the company said it would bring HBM packaging in-house, it could not commit to how many plants would be built or where they would be situated. However, context suggests Idaho as the likely destination for this expansion due to its proximity to both fabs and R&D.
Micron’s second plant in Boise symbolizes a growing sense of urgency to bring semiconductor manufacturing onshore and secure the memory supply chain. While details like cost and timeline are yet to be announced, the news is part of a national agenda with global implications — one that will upend where and how the most critical chips are made.
Read also: New York teams up with IBM, Micron for $10B semiconductor facility at Albany University
Micron’s Second Fab in Idaho- Project Factsheet
Project Overview
Location: Boise, Idaho
Project Type: Leading-edge DRAM manufacturing facility
Funding: Part of broader U.S. investment initiative
Announcement Date: June 12, 2025
Jobs: Expected to generate over 17,000 new jobs
Facility Details
Technology: Leading-edge DRAM production
Site: Co-located with existing Micron R&D hub and first Boise fab
Integration: Enables tighter coupling between research and manufacturing
Market Focus: AI applications, defense systems, and data-intensive computing
Micron’s Second Fab in Idaho: Timeline & Investment
Construction Cost: Not disclosed
Construction Timeline: Not disclosed
Production Start: Will come online before New York fab operations begin
Priority: Accelerated timeline compared to other facilities
Current Status
Phase: Planning and development
Next Steps: Timeline and investment details to be announced
Read also: Micron Technology has started expanding its Boise site with a $15 billion project
